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| SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1688 Features Very small-sized package. High power gain. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -30 -20 -5 -30 150 150 -55 to +150 Unit V V V mA W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Reverse transfer capacitance Base-collector time constant Symbol IcBO IEBO hFE fT Cre bb'Cc Testconditons VCB = -10V , IE = 0 VEB = -4V , IC = 0 VCE = -6V , IC = -1mA VCE = -6V , IC = -1mA VCB = -6V , f = 1MHz VCE = -6V , IC = -1mA, f = 31.9MHz 60 150 230 1.1 11 1.7 20 Min Typ Max -0.1 -0.1 270 MHz pF ps Unit iA iA Voltage gain PG 22 dB Noise figure NF VCE = -6V, IC = -1mA, f = 100MHz 2.5 dB hFE Classification Marking Rank hFE 3 60 120 E 4 90 180 5 135 270 www.kexin.com.cn 1 |
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